Method of growth of primary anhydrite crystals under moderate conditions
US4337238A · kind A · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1981 |
| Grant date | Jun 29, 1982 |
| Priority date | — |
| Expiry date | May 18, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01F11/46
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of selective formation of anhydrite crystals, to the predominant exclusion of formation of gypsum and bassanite, by addition of a small but effective amount of a selective crystallization inhibitor, which inhibits the formation of gypsum and bassanite crystals, but not anhydrite crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.