Epitaxial integrated E-dE solid state detector telescope

US4340899A · kind A · utility

Inventors

• Kazuo Husimi · Kitami, JP
• Chisu KIM · Kodaira, JP

Key dates

• Filing date: Jan 31, 1980
• Grant date: Jul 20, 1982
• Expiry date: Jan 31, 2000

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/295

Abstract

An epitaxial integrated E-dE solid state detector telescope comprising a dE detector produced on an epitaxial layer and a E detector produced on a high purity silicon layer, both of which are fabricated on a single silicon wafer having N-N.sup.+ -N type complex structure. Said dE and E detectors are electrically isolated by a very low resistive N.sup.+ type silicon layer, which is produced on the high purity N type silicon substrate by impurity diffusion technique and is buried under the epitaxial silicon layer. Electrodes of dE and E detectors are produced on both sides of the silicon wafer by means of evaporation of gold in a vacuum. Said electrodes are reverse biased and depletion layers which act as active regions of dE and E detectors are extended from outsides toward said buried layer, providing independent charge collections of carries produced by incident charged particles in dE and E detectors by said electrodes.