Information recording medium and recording and reproducing system using the same
US4340953A · kind A · utility
37Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | May 7, 1980 |
| Grant date | Jul 20, 1982 |
| Priority date | — |
| Expiry date | May 7, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/08
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An information recording medium comprises a silicon substrate, a silicon dioxide film formed on one principal surface of the semiconductor substrate and a silicon nitride film formed on the silicon dioxide film. A recording electrode stylus is moved relative to and along the surface of the silicon nitride film while applying a recording signal voltage between the stylus and substrate, thus causing charges corresponding to the recording signal voltage to be passed through the silicon dioxide film by the tunnel effect and stored in the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.