Semiconductor laser with buffer layer
US4340966A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1980 |
| Grant date | Jul 20, 1982 |
| Priority date | — |
| Expiry date | Feb 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.