Process for producing an injection laser and laser obtained by this process
US4341570A · kind A · utility
7Cited by
7References
4Claims
0Family size
Inventors
Key dates
| Filing date | Sep 3, 1980 |
| Grant date | Jul 27, 1982 |
| Priority date | — |
| Expiry date | Sep 3, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Process for producing an injection laser and laser obtained by this process. The active layer is weakly n doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homojunctions and two index jumps and the final structure is planar. In addition, there is an auto-alignment of the implanted and diffused zones. Application to the construction of lasers used in optical telecommunication systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.