Method of restoring semiconductor device performance
US4341594A · kind A · utility
35Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1981 |
| Grant date | Jul 27, 1982 |
| Priority date | — |
| Expiry date | Feb 27, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contaminant metal residue on an organic passivation layer of a semiconductor device is removed by plasma etching thereof whereby the performance of the device is restored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.