Patent · US Expired

Process for forming opening having tapered sides in a plasma nitride layer

US4342617A · kind A · utility

65Cited by
4References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 23, 1981
Grant dateAug 3, 1982
Priority date—
Expiry dateFeb 23, 2001

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02164
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process is described for forming a plasma nitride (SiNy) layer and a tapered opening through the layer so that the opening may more readily receive ohmic contacts. During the formation of the plasma nitride layer, more silane (over ammonia) is used to form a silicon rich upper portion of the layer. During the subsequent etching of this layer to form the opening, the silicon rich portion of the plasma nitride layer etches more quickly than the remainder of the layer and this results in the formation of the tapered opening through the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.