Method of metallizing a ceramic substrate
US4342632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 1981 |
| Grant date | Aug 3, 1982 |
| Priority date | — |
| Expiry date | May 1, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/388
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A ceramic substrate is metallized by a method including the steps of: PA1 (A) chemically cleaning the substrate, PA1 (B) sputter etching the chemically cleaned substrate, PA1 (C) sputtering a chromium layer of about 200 angstroms in thickness onto substrate, PA1 (D) sputtering a molybdenum layer of about 3500 angstroms in thickness onto the chromium layer, PA1 (E) sputtering a copper layer of about 25,000 angstroms in thickness onto the molybdenum layer, PA1 (F) firing the coated substrate in dry hydrogen at about 1000.degree. C. for about 10 minutes, PA1 (G) plating a copper-silver brazing alloy of about 0.0003 inch in thickness onto the copper layer, and PA1 (H) firing in dry hydrogen at about 700.degree. C. for about 10 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.