Method for forming .gamma.-boron
US4342734A · kind A · utility
5Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1981 |
| Grant date | Aug 3, 1982 |
| Priority date | — |
| Expiry date | Jul 20, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C4/185
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma-spray technique using rapid temperature quenching transforms commercially available .beta.-rhombohedral boron in powder form into thick, dense wafers of crystalline .gamma.-tetragonal boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.