Method of producing a semiconductor device
US4343080A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1980 |
| Grant date | Aug 10, 1982 |
| Priority date | — |
| Expiry date | May 30, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.