Manufacturing semiconductor wafer devices by simultaneous slicing and etching
US4343662A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 1981 |
| Grant date | Aug 10, 1982 |
| Priority date | — |
| Expiry date | Mar 31, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method of forming semiconductor devices incorporates etching during the slicing of a semiconductor ingot from which semiconductor wafers are formed. In addition, a partial slicing through the ingot yields partially cut wafers which are maintained integral beyond a diffusion step. Grinding is then employed to remove unwanted material, to shape, and to accomplish the separation of the wafers. A doped, silicon ingot is used with a solution of sodium hydroxide or potassium hydroxide as the etchant. With the ingot in the [111] type of crystal orientation, the etching proceeds readily adjacent to the slicing cuts to facilitate the slicing, and proceeds slowly elsewhere to minimize material wastage. As a result, the formation of extremely thin wafers with minimal cutting loss is possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.