Semiconductor devices by laser enhanced diffusion
US4343832A · kind A · utility
17Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1980 |
| Grant date | Aug 10, 1982 |
| Priority date | — |
| Expiry date | Oct 2, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is described for the doping of semiconductors utilizing laser beam melting of the semiconductor surface in the presence of a dopant source. By selecting the laser wavelength to satisfy one of several criteria relating the semiconductor absorption coefficient and wafer thickness, or the dopant thickness and doping depth, the heating and melting are constrained to occur in a small local region near the surface where the laser beam impinges. Use of this invention to produce Zener diodes having abrupt doping profiles, as well as other device structures, is also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.