Patent · US Expired

Process for producing a layer containing silicon

US4344984A · kind A · utility

10Cited by
0References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 17, 1981
Grant dateAug 17, 1982
Priority date—
Expiry dateJun 17, 2001

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The process consists of introducing into the silicon-containing layer at the same time as silicon deposition, another element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and greater than 0.1%. According to a preferred variant, this element is germanium. Deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer undergoes heat treatment in an atmosphere of a plasma containing hydrogen or one of its isotopes at a temperature below the crystallization temperature T of the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.