Removing hardened organic materials during fabrication of integrated circuits using anhydrous hydrazine solvent
US4346125A · kind A · utility
8Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1980 |
| Grant date | Aug 24, 1982 |
| Priority date | — |
| Expiry date | Dec 8, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an integrated circuit fabrication sequence, a hardened mask pattern adhered to an underlying substrate is removed from the substrate by a solvent that comprises anhydrous hydrazine and dimethyl sulfoxide. The solvent rapidly penetrates the interface between the pattern and the underlying substrate and quickly breaks the adhesive bonds therebetween. Other materials (e.g., Al, Si, SiO.sub.2) in the structure being fabricated are not deleteriously affected by the solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.