Patent · US Expired

Ion implantation system

US4346301A · kind A · utility

21Cited by
5References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 19, 1981
Grant dateAug 24, 1982
Priority date
Expiry dateMar 19, 2001

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J27/02
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plurality of beam generating units 76, 78, 80 and 82 each produces separated rectangular ion beams for implantation onto a targets 52 and 54 rotatively moving therepast. Each rectangular footprint is long in the direction of motion and is scanned transversely to the direction of motion. A plurality of beam generating units can be positioned adjacent to each other to multiply implant targets because of the compact structure of the separated ion source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.