Light detecting photodiode-MIS transistor device
US4346395A · kind A · utility
10Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1980 |
| Grant date | Aug 24, 1982 |
| Priority date | — |
| Expiry date | Mar 26, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A light detector device comprises at least one pair made up of a light sensitive photodiode and a light signal reading MIS transistor switch. The pair is formed on an insulating substrate such as sapphire. The source region of the MIS transistor switch is contiguous with a photosensitive pn junction of the photodiode. The source, drain and channel regions of the MIS transistor switch reach the insulating substrate, thereby reducing the area of pn junction of the MIS transistor and hence the junction capacitance so that high signal output is available from the photodiode with high S/N ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.