Reproduce only storage matrix
US4347585A · kind A · utility
10Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1980 |
| Grant date | Aug 31, 1982 |
| Priority date | — |
| Expiry date | Jun 9, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This matrix has high barrier Schottky diodes at Read or Reproduce Only Storage (ROS) matrix crossovers to represent 1's (the absence of diodes representing 0's) and low barrier Schottky diodes connected to select individual column lines (bit lines) of the ROS matrix. A current sink is connected to each column. Any unselected column causes the current in that column to be diverted through the respective low barrier diode, thus preventing that current from flowing into the selected word line. The only current that flows into the selected word line of a matrix depends from the single selected column current source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.