Method for producing neutron doped silicon having controlled dopant variation
US4348351A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1980 |
| Grant date | Sep 7, 1982 |
| Priority date | — |
| Expiry date | Apr 21, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/261
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling dopant variation in neutron silicon is provided wherein the selection of undoped single crystal silicon for neutron transmutation doping is based upon certain criteria, for example, a maximum dopant difference which depends only on the desired uniformity of the neutron doped material and a maximum average dopant concentration which is a function of the homogeneity of both the undoped single crystal silicon and the neutron doped product. The results achievable from using the method for controlling dopant variation in the neutron doped silicon provides uniformity of the neutron doped product determinable by the correct choice of dopant difference and dopant factor, and that the doping precision for the radiated silicon does not depend on the doping factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.