Method and apparatus for plasma etching
US4349409A · kind A · utility
34Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1981 |
| Grant date | Sep 14, 1982 |
| Priority date | — |
| Expiry date | May 11, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.