Doping from a photoresist layer
US4350541A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1980 |
| Grant date | Sep 21, 1982 |
| Priority date | — |
| Expiry date | Jul 31, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer. The heat resistive overcoating layer may be an insulation layer having a window through which a conductive layer is connected to the doped region and is extended over the overcoating layer. The doped region is formed readily and accurately with relatively few process steps and with a pattern corresponding to an exposure patter…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.