Cathode for etching
US4350578A · kind A · utility
73Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1981 |
| Grant date | Sep 21, 1982 |
| Priority date | — |
| Expiry date | May 11, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode has a quartz plate with a series of recesses having disks therein of the same material as the object to be etched and a ring of that same material around the outer edge of the plate. In a preferred embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.