Semiconductor device having an amorphous metal layer contact
US4350994A · kind A · utility
5Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1979 |
| Grant date | Sep 21, 1982 |
| Priority date | — |
| Expiry date | Oct 4, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.