Process for sintering reaction bonded silicon nitride
US4351787A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1978 |
| Grant date | Sep 28, 1982 |
| Priority date | — |
| Expiry date | Dec 18, 1998 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2003/1042
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Sintered silicon nitride articles are prepared from a silicon nitride compact by forming a silicon powder containing one or more sintering additives for silicon nitride into a compact having at density of at least 1.3 g/cm.sup.3, said additives being present in the powder in an amount such as to ensure an additive content of from 0.5 to 20 wt. % in the silicon nitride compact, nitriding the silicon compact by heating under nitrogen gas blanket at a temperature not exceeding 1500.degree. C., to convert said silicon into reaction bonded silicon nitride, and sintering the reaction bonded silicon nitride compact by heating in a nitrogen gas atmosphere at a temperature of at least 1500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.