Semiconductor device and method of manufacturing the same
US4351856A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1980 |
| Grant date | Sep 28, 1982 |
| Priority date | — |
| Expiry date | Jul 18, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.