Ion selective field-effect sensor
US4352726A · kind A · utility
7Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1980 |
| Grant date | Oct 5, 1982 |
| Priority date | — |
| Expiry date | Oct 28, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ion selective field-effect sensor selectively sensitive to a particular cation to be measured is disclosed. In the sensor is used a giant heterocyclic compound selectively forming a complex with the particular cation as an ion sensitive film provided on a surface of a field-effect semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.