Patent · US Expired

Double crucible Czochralski crystal growth apparatus

US4352784A · kind A · utility

16Cited by
8References
5Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 25, 1979
Grant dateOct 5, 1982
Priority date
Expiry dateMay 25, 1999

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1052
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.