Patent · US Expired

High-intensity solid-state solar-cell device

US4352948A · kind A · utility

28Cited by
5References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 17, 1980
Grant dateOct 5, 1982
Priority date
Expiry dateNov 17, 2000

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

The invention contemplates a solar-cell construction wherein plural spaced elongate unit cells of an array are formed from a parallel-grooved single wafer or body of substrate material of a first conductivity type, with adjacent sidewalls of adjacent units at each inter-unit groove formation. Both sidewalls at each of a succession of grooves are formed with regions of second conductivity type, and an electrically conductive coating lines each sidewall having a second conductivity type region. A first output-terminal interconnect extends along one margin of the body and has ohmic contact with the coatings of the sidewalls having regions of the second conductivity type. A second output-terminal connection has ohmic contact to the body in a surface region of first conductivity type. Various embodiments are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.