(1-x)BaO.xTiO.sub.2 System dielectric material for use in a microwave device
US4353047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1981 |
| Grant date | Oct 5, 1982 |
| Priority date | — |
| Expiry date | Apr 28, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO.sub.2 (0.7.ltoreq.x.ltoreq.0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.