Method of casting silicon into thin sheets
US4356141A · kind A · utility
3Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1981 |
| Grant date | Oct 26, 1982 |
| Priority date | — |
| Expiry date | Mar 5, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.