Heteroepitaxy of germanium silicon on silicon utilizing alloying control
US4357183A · kind A · utility
24Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1980 |
| Grant date | Nov 2, 1982 |
| Priority date | — |
| Expiry date | Aug 13, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is described for producing Ge or a Ge.sub.1-x Si.sub.x heteroepitaxy film on Si by depositing films of Ge or Ge.sub.1-x Si.sub.x on Si and subjecting the body so formed to a controlled temperature environment, wherein the body is rapidly (within a time period t.sub.o of more than about 100 microseconds) brought to a predetermined temperature within the alloy range of the deposited film but less than the melting point of Si. The body is then held at such temperature for a relatively short time not to exceed about 3 minutes, including the time period t.sub.o.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.