High resolution lithography using protons or alpha particles
US4357417A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1981 |
| Grant date | Nov 2, 1982 |
| Priority date | — |
| Expiry date | Apr 6, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of lithographically forming a pattern on a surface is disclosed. The surface on which the pattern is to be formed is first coated with a resist layer. A mask preferably consisting of a beryllium of foil and a pattern gold layer affixed thereto is then positioned in overlying relationship to the resist layer. The thickness of the beryllium foil is selected such that it is transparent to high energy particles of a preselected energy while the combination of the pattern gold areas and the beryllium foil is impervious to these particles. A flood beam of high energy particles is directed such that it impinges on the beryllium foil thereby exposing the resist in areas not protected by the combination of the beryllium foil and the gold. The resist layer is processed to produce a patterned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.