Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions
US4357621A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 1979 |
| Grant date | Nov 2, 1982 |
| Priority date | — |
| Expiry date | Oct 29, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/136
Abstract
A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.