Method for making a carbide thin film thermistor
US4359372A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1980 |
| Grant date | Nov 16, 1982 |
| Priority date | — |
| Expiry date | Oct 10, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49101
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for making a carbide thin film thermistor which comprises providing an insulating substrate, forming at least one pair of electroconductive electrodes on the substrate in a desired pattern, and forming a carbide resistor film on the insulating substrate and the electroconductive electrodes by sputtering process while leaving part of the electrodes exposed for external connections. A carbide target material is sputtered in an inert gas atmosphere containing a small amount of an impurity gas. The thermistor element is arbitrarily controlled to have a desired level of resistance by choice of the impurity gas, the amount of such gas and the mode of sputtering. Optionally, the element is trimmed to adjust its resistance accurately and is also hermetically sealed within a glass tube to prevent the element from being contaminated with harmful substances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.