Method of producing a double layer having a hetero-junction for a storage electrode of a camera device
US4359488A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 1980 |
| Grant date | Nov 16, 1982 |
| Priority date | — |
| Expiry date | Dec 3, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/233
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A double layer having a hetero-junction interface for a storage electrode of an electro-optical camera device is produced by vacuum vapor deposition of n-conductive cadmium selenide or cadmium sulfo-selenide onto a n.sup.+ -conductive signal electrode layer comprised of tin oxide. The cadmium material to be vapor deposited is admixed with a small amount of a glass additive, such as boron oxide, the admixture sintered in vacuum and thereafter the cadmium material is vapor-deposited onto the signal electrode without spattering. The resultant hetero-junction is substantially free of metallic cadmium and such double layer is particularly useful in a Vidicon target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.