Method for LPCVD co-deposition of metal and silicon to form metal silicide
US4359490A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 13, 1981 |
| Grant date | Nov 16, 1982 |
| Priority date | — |
| Expiry date | Jul 13, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surface is maintained at a temperature of about 500.degree.-700.degree. C. The reactor is purged by the successive steps of introducing an inert gas into the reactor, introducing a reducing atmosphere into the reactor and introducing hydrogen chloride gas into the reactor. Silane is then introduced into the reactor such that a base layer of polysilicon is formed on the surface. Then, while maintaining silane introduction to the reactor, metal chloride vapor is simultaneously introduced into the reactor such that metal and silicon are co-deposited on the polysilicon as metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.