Solid-state imaging device
US4360821A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1979 |
| Grant date | Nov 23, 1982 |
| Priority date | — |
| Expiry date | Aug 13, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.