Semiconductor light emitting device
US4360919A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1980 |
| Grant date | Nov 23, 1982 |
| Priority date | — |
| Expiry date | Sep 10, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2232
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved semiconductor light emitting device having a stabilized lateral mode oscillation and device current. In the present invention, a current rejecting layer and an etch-back preventive layer are added to a semiconductor laser provided with a clad layer composed of a projecting portion for confining light from an active layer and a portion for passing the light. The thicknesses of the layers, the relationships of forbidden band widths of the layers and their conductivity type are all specified. An easily manufactured semiconductor laser with an excellent current limit function and optical guide function are obtained and the lateral mode oscillation oscillation is stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.