Method of making integrated circuits
US4361600A · kind A · utility
98Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1981 |
| Grant date | Nov 30, 1982 |
| Priority date | — |
| Expiry date | Nov 12, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming in a substrate of monocrystalline silicon semiconductor material having a major surface, a plurality of islands of silicon each including an active region of the substrate adjacent the major surface and surrounded by a body of silicon dioxide separating the islands from the substrate is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.