Method for making semiconductor device
US4362599A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1981 |
| Grant date | Dec 7, 1982 |
| Priority date | — |
| Expiry date | Feb 23, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching solution to form a dent, removing the oxide film and growing an epitaxial layer of a conductor type opposite to that of the substrate on the entire surface of the substrate, and masking the dent with an oxide film and etching the epitaxial layer with an anisotropic etching solution to flatten the surface of the epitaxial layer, and a method for making this semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.