Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4363828A · kind A · utility
138Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1979 |
| Grant date | Dec 14, 1982 |
| Priority date | — |
| Expiry date | Dec 12, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.