Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process
US4363868A · kind A · utility
27Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1980 |
| Grant date | Dec 14, 1982 |
| Priority date | — |
| Expiry date | Dec 23, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.