Tantalum thin film capacitor
US4364099A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1980 |
| Grant date | Dec 14, 1982 |
| Priority date | — |
| Expiry date | Aug 20, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tantalum film capacitor has an .alpha.-tantalum as a lower electrode, a chemical conversion layer of .alpha.-tantalum as a dielectric and an upper electrode, an improvement involving forming a highly nitrogen-doped tantalum film between the .alpha.-tantalum and a substrate, and also, another improvement involving forming a transitional thin tantalum layer between said highly nitrogen-doped tantalum film and said .alpha.-tantalum. The nitrogen concentration of the highly nitrogen-doped tantalum film is from 14 to 30 atomic %. The electrical properties, especially leakage current, are improved over those of the prior art. A disadvantage of the conventional .alpha.-tantalum thin film capacitor, that is the necessity of using an expensive partial glazed Al.sub.2 O.sub.3 substrate, is eliminated, and a non-glazed Al.sub.2 O.sub.3 substrate can be used in the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.