Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase
US4366009A · kind A · utility
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4Claims
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Key dates
| Filing date | Dec 8, 1980 |
| Grant date | Dec 28, 1982 |
| Priority date | — |
| Expiry date | Dec 8, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is cooled to a temperature from room temperature to 200.degree. C. During cooling, the structure's upper surface is contacted with a liquid gallium melt in such a manner that the doping elements present in the few remaining drops of the last growth melt not removed by the wiping off are dissolved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.