Copper alloy for use as lead material for semiconductor devices
US4366117A · kind A · utility
14Cited by
7References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 3, 1981 |
| Grant date | Dec 28, 1982 |
| Priority date | — |
| Expiry date | Jun 3, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A copper alloy for use as a lead material for semiconductor devices, which comprises 0.04-1.0% Ni, 0.01-0.3% Si, and 0.05-15% Zn, all by weight, and the remainder Cu and inevitable impurities. The alloy may contain, in addition to these, a total amount of 0.001-1.0% by weight of one or two or more elements as an accessory ingredient or ingredients selected from the group consisting of 0.001-0.1% by weight each of P and As and 0.01-0.5% by weight each of Ti, Cr, Sn, Mn, and Mg.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.