Ultrasonic bond testing of semiconductor devices
US4366713A · kind A · utility
25Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1981 |
| Grant date | Jan 4, 1983 |
| Priority date | — |
| Expiry date | Mar 25, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2291/102
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The bond between a structured copper heat sink member and a semiconductor wafer is inspected for voids and unbonds by a focused ultrasonic pulse transmission method. The small focused spot of ultrasound is transmitted along the structured copper strands and is attenuated in the lateral direction. The absence of a received pulse or a significantly reduced amplitude signal, as the assembled device is scanned with acoustic pulses, indicate flaws in the bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.