Biasing methods and circuits for series connected transistor switches
US4367421A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1980 |
| Grant date | Jan 4, 1983 |
| Priority date | — |
| Expiry date | Apr 21, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/102
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment of the invention, a switching circuit is provided by connecting the main current paths of a plurality of relatively low voltage transistors in series for switching a relatively high level of voltage, with zener diodes being connected across the main current paths of each one of the transistors, the zeners having a breakdown voltage rating no greater than the inverse voltage rating of their respective transistor, and polarized for breaking down whenever the inverse voltage rating of the transistor is exceeded, the zener diodes also providing a voltage divider circuit for applying appropriate levels of bias voltage to the common connections between the transistors for ensuring the inverse voltage ratings of the transistors are not exceeded at times that the transistors are all turned off, or non-conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.