Semiconductor device
US4368524A · kind A · utility
25Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1980 |
| Grant date | Jan 11, 1983 |
| Priority date | — |
| Expiry date | Jul 18, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor device for comprising electrically alterable read-only memories formed in and on the same silicon substrate is disclosed. The read-only memories are driven by both a first voltage having one polarity and a second voltage having the opposite polarity. The first voltage is supplied from an external unipolar voltage source, but the second voltage is generated by a bipolar voltage generator which is located on the same silicon substrate and is driven by said external unipolar voltage source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.