Method for manufacturing semiconductor elements from amorphous silicon

US4369205A · kind A · utility

Assignee

• Messerschmitt Bolkow Blohm GmbH · DE

Inventors

• Gerhard Winterling · Ottobrunn, DE
• Max Koniger · Pullach, DE

Key dates

• Filing date: Oct 10, 1980
• Grant date: Jan 18, 1983
• Expiry date: Oct 10, 2000

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S204/05
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.