Process of producing relief structures using polyamide ester resins
US4369247A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1981 |
| Grant date | Jan 18, 1983 |
| Priority date | — |
| Expiry date | Dec 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of a composition a polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups is applied to substrate such as a coated silicon wafer, which forms the base an electrical device, and is dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure having a sharp definition and good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition: PA0 a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.