Method of semiconductor device for generating electron beams
US4370797A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | May 29, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C2523/86
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.